COMPARISON OF 1/F NOISE OF ALGAAS/GAAS HEMTS AND GAAS-MESFETS

被引：29

作者：

TACANO, M

SUGIYAMA, Y

机构：

[1] Electrotechnical Laboratory, Tsukuba, Ibaraki, 305

来源：

SOLID-STATE ELECTRONICS | 1991年 / 34卷 / 10期

关键词：

D O I：

10.1016/0038-1101(91)90099-K

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The drain voltage noise of commercial AlGaAs/GaAs HEMTs shows typical f-1.0 noise characteristics with a Hooge noise parameter of about 6 x 10(-5), while that of conventional GaAs MESFETs has a large GR noise bulge at about 15 Hz. The noise levels of the HEMT are smaller than those of the MESFET by 19 dB Hz-0.5 at the same bias conditions, manifesting the advantage of HEMT as a low-noise device.

引用

页码：1049 / 1053

页数：5

共 21 条

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