DEVICE PROCESS DEPENDENCE OF LOW-FREQUENCY NOISE IN GAALAS/GAAS HETEROSTRUCTURE

被引：17

作者：

TACANO, M

SUGIYAMA, Y

SOGA, H

机构：

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 01期

关键词：

D O I：

10.1016/0038-1101(89)90047-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：49 / 55

页数：7

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