1-F NOISE IN QUARTER-MICRON FILAMENTS OF GAAS AND INP MADE BY FOCUSED ION-BEAM IMPLANTATION

被引：10

作者：

TACANO, M

KANAYAMA, T

SUGIYAMA, Y

机构：

[1] Electrotechnical Laboratory, Tsukuba, 305

来源：

SOLID-STATE ELECTRONICS | 1991年 / 34卷 / 02期

关键词：

D O I：

10.1016/0038-1101(91)90089-H

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Typical 1/f noise was excited in quarter-micron filaments of both GaAs and InP which were successfully made by a focused ion-beam implantation. Their noise levels were observed to vary exactly as f-1.0 and increased in proportion to the square of the terminal voltages. The GaAs filament has a generation-recombination (GR) noise bulge at around 500 Hz, corresponding to the deep level activation energy of 0.6 eV. The noise levels of the InP filament, on the other hand, decreased monotonically throughout the frequency ranges from 0.1 Hz to 100 kHz, indicating much less deep levels. The Hooge's noise parameters were evaluated exactly by the carrier numbers derived from the Hall measurement and 1/f noise levels to be 4.5 X 10(-6) for the GaAs filament and 6.1 X 10(-6) for the InP one. These values are the smallest yet reported in these materials.

引用

页码：193 / 196

页数：4

共 14 条

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