1/F NOISE IN ION-IMPLANTED INDIUM-PHOSPHIDE LAYERS

被引：11

作者：

TACANO, M

OIGAWA, K

SUGIYAMA, Y

机构：

[1] Electrotechnical Lab, Tsukuba, Jpn, Electrotechnical Lab, Tsukuba, Jpn

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 08期

关键词：

SEMICONDUCTOR DEVICES - Noise;

D O I：

10.1016/0038-1101(88)90421-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The frequency dependence of noise levels in ion-implanted devices of InP follows Hooge's relationship left bracket Phys. Lett. A-29, 139 (1969) right bracket . The noise levels vary in proportion to the square of the terminal voltages, and decrease linearly with the frequency and the total carriers throughout the ranges from 0. 1 Hz to 100 kHz. The Hooge parameter is alpha //H equals 1. 5 multiplied by 10** minus **4.

引用

页码：1243 / 1245

页数：3

共 11 条

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