TIN AS A HIGH-TEMPERATURE DIFFUSION BARRIER FOR ARSENIC AND BORON

被引：59

作者：

TING, CY

机构：

[1] IBM, Thomas J. Watson Research Cent,, Yorktown Heights, NY, USA, IBM, Thomas J. Watson Research Cent, Yorktown Heights, NY, USA

来源：

THIN SOLID FILMS | 1984年 / 119卷 / 01期

关键词：

D O I：

10.1016/0040-6090(84)90153-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：11 / 21

页数：11

共 9 条

[1] THERMAL-STABILITY OF TITANIUM NITRIDE FOR SHALLOW JUNCTION SOLAR-CELL CONTACTS [J].

CHEUNG, NW ;

VONSEEFELD, H ;

NICOLET, MA ;

HO, F ;

ILES, P .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :4297-4299

[2]

CHEUNG NW, 1980, P S THIN FILM INTERF, V80, P323

[3]

FOURNIER PR, 1975, Patent No. 3879746

[4] TIN AS A DIFFUSION BARRIER IN THE TI-PT-AU BEAM-LEAD METAL SYSTEM [J].

GARCEAU, WJ ;

FOURNIER, PR ;

HERB, GK .

THIN SOLID FILMS, 1979, 60 (02) :237-247

[5] TIN FORMED BY EVAPORATION AS A DIFFUSION BARRIER BETWEEN AL AND SI [J].

TING, CY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01) :14-18

[6] THE USE OF TITANIUM-BASED CONTACT BARRIER LAYERS IN SILICON TECHNOLOGY [J].

TING, CY ;

WITTMER, M .

THIN SOLID FILMS, 1982, 96 (04) :327-345

[7] INVESTIGATION OF TITANIUM-NITRIDE LAYERS FOR SOLAR-CELL CONTACTS [J].

VONSEEFELD, H ;

CHEUNG, NW ;

MAENPAA, M ;

NICOLET, MA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) :873-876

[8] HIGH-TEMPERATURE CONTACT STRUCTURES FOR SILICON SEMICONDUCTOR-DEVICES [J].

WITTMER, M .

APPLIED PHYSICS LETTERS, 1980, 37 (06) :540-542

[9] TIN AND TAN AS DIFFUSION-BARRIERS IN METALLIZATIONS TO SILICON SEMICONDUCTOR-DEVICES [J].

WITTMER, M .

APPLIED PHYSICS LETTERS, 1980, 36 (06) :456-458

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