IMPACT IONIZATION THRESHOLD IN SEMICONDUCTORS

被引：22

作者：

HODGKINSON, RJ

机构：

来源：

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON | 1963年 / 82卷 / 530期

关键词：

D O I：

10.1088/0370-1328/82/6/322

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1010 / &

共 21 条

[1]

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[2]

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[4] QUANTUM EFFICIENCY IN INSB [J].

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[5] REFLECTANCE AND PHOTOEMISSION FROM SI [J].

BRUST, D ;

PHILLIPS, JC ;

COHEN, ML .

DASH, WC ;

NEWMAN, R .

PHYSICAL REVIEW, 1955, 99 (04) :1151-1155

[7]

DEXTER DL, 1960, P INT C SEMICONDUCTO

[8]

FRANZ W, 1960, HANDB PHYS, V17

HARTMAN, RL .

PHYSICAL REVIEW, 1962, 127 (03) :765-&

[10] IMPACT IONIZATION AND QUANTUM EFFICIENCY IN SILICON [J].

HODGKINSON, RJ .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 82 (525) :58-+