METASTABLE BEHAVIOR OF THE DX CENTER IN SI-DOPED GAAS

被引：8

作者：

FUJISAWA, T

KRISTOFIK, J

YOSHINO, J

KUKIMOTO, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 12期

关键词：

D O I：

10.1143/JJAP.27.L2373

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L2373 / L2375

页数：3

共 12 条

[1] LONG-LIVED RESONANCE STATES IN N-DOPED ALGAAS
HJALMARSON, HP
DRUMMOND, TJ
[J]. PHYSICAL REVIEW LETTERS, 1988, 60 (23) : 2410 - 2413
[2] DEEP DONOR MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY EFFECT
HJALMARSON, HP
DRUMMOND, TJ
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (10) : 656 - 658
[3] Kukimoto H., 1987, 18th International Conference on the Physics of Semiconductors, P915
[4] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS
LANG, DV
LOGAN, RA
JAROS, M
[J]. PHYSICAL REVIEW B, 1979, 19 (02) : 1015 - 1030
[5] LEDEBO LA, 1986, SEMIINSULATING 3 5 M, P543
[6] DIRECT EVIDENCE FOR THE DX CENTER BEING A SUBSTITUTIONAL DONOR IN ALGAAS ALLOY SYSTEM
MIZUTA, M
TACHIKAWA, M
KUKIMOTO, H
MINOMURA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (02): : L143 - L146
[7] PRESSURE STUDY OF METASTABILITY IN GA1-XALXAS GAAS-SI HETEROJUNCTIONS
PIOTRZKOWSKI, R
ROBERT, JL
LITWINSTASZEWSKA, E
ANDRE, JP
[J]. PHYSICAL REVIEW B, 1988, 37 (02): : 1031 - 1034
[8] PHOTOCONDUCTIVITY STORAGE IN GA1-XA1XAS ALLOYS AT LOW-TEMPERATURES
SAXENA, AK
[J]. SOLID-STATE ELECTRONICS, 1982, 25 (02) : 127 - 131
[9] METASTABLE CARRIER CONCENTRATION IN GAAS GAALAS HETEROSTRUCTURE UNDER HYDROSTATIC-PRESSURE
SUSKI, T
LITWINSTASZEWSKA, E
WISNIEWSKI, P
DMOWSKI, L
ZHUANG, WH
LIANG, GB
SUN, DZ
ZHEN, YP
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (07) : 2307 - 2310
[10] TACHIKAWA M, 1985, JPN J APPL PHYS 2, V24, pL893, DOI 10.1143/JJAP.24.L893

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