THRESHOLD ADJUSTMENTS FOR COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR OPTIMIZATION USING B AND ARSENIC FOCUSED ION-BEAMS

被引：9

作者：

LEE, JY

KUBENA, RL

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 10期

关键词：

D O I：

10.1063/1.96738

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：668 / 669

页数：2

共 9 条

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STEVENS, EH .

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[5]

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[6] SELECTIVE SI AND BE IMPLANTATION IN GAAS USING A 100 KV MASS-SEPARATING FOCUSED ION-BEAM SYSTEM WITH AN AU-SI-BE LIQUID-METAL ION-SOURCE [J].

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[7] CHARACTERISTICS OF SUB-MICRON PATTERNS FABRICATED BY GALLIUM FOCUSED-ION-BEAM SPUTTERING [J].

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[8] HIGH-INTENSITY SCANNING ION PROBE WITH SUBMICROMETER SPOT SIZE [J].

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APPLIED PHYSICS LETTERS, 1979, 34 (05) :310-312

[9] A MASS-SEPARATING FOCUSED-ION-BEAM SYSTEM FOR MASKLESS ION-IMPLANTATION [J].

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