CHARACTERIZATION OF THE METAL-SEMICONDUCTOR INTERFACE BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY

被引：4

作者：

CORATGER, R

AJUSTRON, F

BEAUVILLAIN, J

机构：

来源：

MICROSCOPY MICROANALYSIS MICROSTRUCTURES | 1994年 / 5卷 / 01期

关键词：

D O I：

10.1051/mmm:019940050103100

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

Through the results obtained on Au-Si(100) junctions, we show the main aspects of Ballistic Electron Emission Microscopy (BEEM). Spectroscopy allows the local Schottky barrier height to be yielded with a lateral resolution at the interface in the nanometer range. A collector current of electrons is evidenced in the reverse voltage condition. Carrier-carrier scattering is assumed to account for this phenomenon and appears as the dominant process in low energy electron transport. In addition, collector current variations allow BEEM imaging. As the Schottky barrier height is found to be constant in these Au-Si(100) junctions, BEEM image contrast is mainly attributed to scattering in the gold film and interface quality.

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页码：31 / 40

页数：10

相关论文

共 14 条

[1] DIRECT SPECTROSCOPY OF ELECTRON AND HOLE SCATTERING [J].

BELL, LD ;

HECHT, MH ;

KAISER, WJ ;

DAVIS, LC .

PHYSICAL REVIEW LETTERS, 1990, 64 (22) :2679-2682

[2] OBSERVATION OF INTERFACE BAND-STRUCTURE BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY [J].

BELL, LD ;

KAISER, WJ .

PHYSICAL REVIEW LETTERS, 1988, 61 (20) :2368-2371

[3]

BELL LD, 1988, SCANNING MICROSCOPY, V2, P1231

[4]

BINNIG G, 1983, SURF SCI, V131, pL379, DOI 10.1016/0039-6028(83)90112-7

[5] TUNNELING THROUGH A CONTROLLABLE VACUUM GAP [J].

BINNIG, G ;

ROHRER, H ;

GERBER, C ;

WEIBEL, E .

APPLIED PHYSICS LETTERS, 1982, 40 (02) :178-180

[6] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].

Brillson, L. J. .

SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326

[7] A STAGE FOR SUBMICRON DISPLACEMENTS USING ELECTROMAGNETIC COILS AND ITS APPLICATION TO SCANNING TUNNELING MICROSCOPY [J].

CORATGER, R ;

BEAUVILLAIN, J ;

AJUSTRON, F ;

LACAZE, JC ;

TREMOLLIERES, C .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1991, 62 (03) :830-831

[8] CATALYTIC ACTION OF GOLD ATOMS ON THE OXIDATION OF SI(111) SURFACES [J].

CROS, A ;

DERRIEN, J ;

SALVAN, F .

SURFACE SCIENCE, 1981, 110 (02) :471-490

[9] GOLD SILICON INTERFACE MODIFICATION STUDIES [J].

HALLEN, HD ;

FERNANDEZ, A ;

HUANG, T ;

BUHRMAN, RA ;

SILCOX, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (02) :585-589

[10] BALLISTIC ELECTRON-EMISSION SPECTROSCOPY OF NOBLE METAL-GAP(110) INTERFACES [J].

LUDEKE, R ;

PRIETSCH, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03) :885-890