FANO INTERFERENCE IN TYPE-II SEMICONDUCTOR QUANTUM-WELL STRUCTURES

被引：37

作者：

MASCHKE, K

THOMAS, P

GOBEL, EO

机构：

[1] UNIV MARBURG,FACHBEREICH PHYS,W-3550 MARBURG,GERMANY

[2] UNIV MARBURG,WISSENSCH ZENTRUM MAT WISSENSCH,W-3550 MARBURG,GERMANY

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 67卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.67.2646

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We predict, on the basis of a model calculation, that Fano interference effects may be observed in type-II quantum-well structures resulting in pronounced nonreciprocal absorption and emission profiles and interference narrowing due to overlapping resonances.

引用

收藏

页码：2646 / 2649

页数：4

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