SEMIEMPIRICAL TIGHT-BINDING BAND-STRUCTURE OF II3V2 SEMICONDUCTORS - CD3P2, ZN3P2, CD3AS2, AND ZN3AS2

被引:54
作者
SIERANSKI, K
SZATKOWSKI, J
MISIEWICZ, J
机构
[1] Technical University of Wroclaw, 50-370 Wroclaw
来源
PHYSICAL REVIEW B | 1994年 / 50卷 / 11期
关键词
D O I
10.1103/PhysRevB.50.7331
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Semiempirical tight-binding electronic-energy-band structures of the following II3V2 semiconductors are presented: Cd3P2, Zn3P2, Cd3As2, and Zn3As2, The zinc-blende approximation of the real crystal structure was used. The calculations were carried out within the nearest- and second-nearest-neighbor approximation and the single s and p atomic-orbital basis set. The tight-binding parameters were obtained empirically by fitting calculated density of valence states and reflectivity spectra to the empirical spectrum. The presented parametrization of the band structures provides an accurate representation of the valence bands and an adequate description of the lowest and most important conduction bands of II3V2 semiconductors.
引用
收藏
页码:7331 / 7337
页数:7
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