TEMPERATURE-DEPENDENCE OF HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY OF THE HOLE PLASMON AT HEAVILY DOPED P-TYPE GAAS(110) SURFACES

被引：3

作者：

MENG, Y

ANDERSON, J

LAPEYRE, GJ

机构：

[1] Department of Physics, Montana State University, Bozeman

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.45.1500

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of the temperature on high-resolution electron-loss spectroscopy (HREELS) of the valence-band hole plasmon has been studied at the cleaved (110) surface of heavily doped p-type GaAs (n(H) = 2.2 x 10(19) cm-3). We observed significant changes of the energy position and width of the surface-hole-plasmon peak with temperature from 80 to 300 K. This temperature effect is reversible, and found to be correlated to the temperature dependence of surface scattering processes, in conjunction with the kinematic factor.

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页码：1500 / 1503

页数：4

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