CAPACITANCE-VOLTAGE DEPENDENCE OF ZINC-DIFFUSED GAAS P-N JUNCTIONS

被引：11

作者：

AUKERMAN, LW

KYSER, DF

MILLEA, MF

机构：

来源：

SOLID-STATE ELECTRONICS | 1965年 / 8卷 / 02期

关键词：

D O I：

10.1016/0038-1101(65)90043-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：119 / &

共 9 条

[1] ELECTRON-HOLE AND ELECTRON-IMPURITY BAND TUNNELING IN GAAS LUMINESCENT JUNCTIONS [J].

ARCHER, RJ ;

LEITE, RC ;

YARIV, A ;

PORTO, SPS ;

WHELAN, JM .

PHYSICAL REVIEW LETTERS, 1963, 10 (11) :483-&

[2]

GIBBONS LH, 1963, RCA REV, V24, P199

[3]

GUTKIN AA, 1963, SOV PHYS-SOL STATE, V4, P1712

[4] DETERMINATION OF EFFECTIVE IONIC CHARGE OF GALLIUM ARSENIDE FROM DIRECT MEASUREMENTS OF DIELECTRIC CONSTANT [J].

HAMBLETON, K ;

HOLEMAN, BR ;

HILSUM, C .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 77 (498) :1147-&

[5]

JONSCHER AK, 1960, PRINCIPLES SEMICONDU

[6] AVALANCHE BREAKDOWN IN GALLIUM ARSENIDE PARA JUNCTIONS [J].

LOGAN, RA ;

CHYNOWETH, AG ;

COHEN, BG .

PHYSICAL REVIEW, 1962, 128 (06) :2518-&

[7]

LOWEN J, 1960, J ELECTROCHEM SOC, V107, P28

[8] DIFFUSION WITH INTERSTITIAL-SUBSTITUTIONAL EQUILIBRIUM - ZINC IN GAAS [J].

WEISBERG, LR ;

BLANC, J .

PHYSICAL REVIEW, 1963, 131 (04) :1548-&

[9] STIMULATED EMISSION OF EXCITON RECOMBINATION RADIATION IN GAAS P-N JUNCTIONS [J].

WILSON, DK .

APPLIED PHYSICS LETTERS, 1963, 3 (08) :127-129

← 1 →