SCHOTTKY-BARRIER DIODES USING THICK, WELL-CHARACTERIZED BORON PHOSPHIDE WAFERS

被引：25

作者：

KUMASHIRO, Y

OKADA, Y

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 01期

关键词：

D O I：

10.1063/1.96406

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：64 / 66

页数：3

共 11 条

[1]

KUMASHIRO Y, 1985, J CRYST GROWTH, P507

[2] METAL-SEMICONDUCTOR SURFACE BARRIERS [J].

MEAD, CA .

SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1023-&

[3] THERMAL-EXPANSION COEFFICIENT OF BORON MONOPHOSPHIDE [J].

MIZUTANI, T ;

OHSAWA, J ;

NISHINAGA, T ;

UCHIYAMA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (07) :1305-1308

[4] METALLIC IMPURITY-ACTIVATED CRYSTAL-GROWTH OF BORON PHOSPHIDE BY CHEMICAL VAPOR-DEPOSITION AND ITS PHYSICAL-PROPERTIES [J].

MOTOJIMA, S ;

MIURA, Y ;

SUGIYAMA, K ;

TAKAHASHI, Y .

BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN, 1975, 48 (11) :3161-3167

[5] EPITAXIAL-GROWTH OF BP COMPOUNDS ON SI SUBSTRATES USING B2H6-PH3-H2 SYSTEM [J].

SHOHNO, K ;

TAKIGAWA, M ;

NAKADA, T .

JOURNAL OF CRYSTAL GROWTH, 1974, 24 (OCT) :193-196

[6]

Sze S. M., 1981, PHYSICS SEMICONDUCTO, P245

[7] DIELECTRIC-CONSTANT AND REFRACTIVE-INDEX OF BORON MONOPHOSPHIDE [J].

TAKENAKA, T ;

TAKIGAWA, M ;

SHOHNO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (10) :2021-2022

[8]

TAKENAKA T, 1978, J ELECTROCHEM SOC, V125, P634

[9] HETEROEPITAXIAL GROWTH OF BORON MONOPHOSPHIDE ON SILICON SUBSTRATE USING B2H6-PH3-H2 SYSTEM [J].

TAKIGAWA, M ;

HIRAYAMA, M ;

SHOHNO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (03) :411-416

[10] THERMOELECTRIC-POWER OF BORON PHOSPHIDE AT HIGH-TEMPERATURES [J].

YUGO, S ;

KIMURA, T .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 59 (01) :363-370

← 1 2 →