EPITAXIAL YTTRIA-STABILIZED ZIRCONIA ON (1102)SAPPHIRE FOR YB2CU3O7-DELTA THIN-FILMS

被引：74

作者：

WU, XD

MUENCHAUSEN, RE

NOGAR, NS

PIQUE, A

EDWARDS, R

WILKENS, B

RAVI, TS

HWANG, DM

CHEN, CY

机构：

[1] UNIV CALIF LOS ALAMOS SCI LAB,ERDC,DIV CHEM & LASER SCI,LOS ALAMOS,NM 87545

[2] NEOCERA INC,NEW BRUNSWICK,NJ 08901

[3] BELLCORE,RED BANK,NJ 07701

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 03期

关键词：

D O I：

10.1063/1.104669

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial yttria-stabilized zirconia (YSZ) films were deposited on (1102BAR1) sapphire by pulsed laser deposition. The films are formed in a cubic phase with the a axis normal to the substrate surface. Ion beam (2.8 MeV He++) channeling measurements shows that the YSZ films are highly crystalline with a channeling minimum yield of 8%. The epitaxial relationship between the film and substrate is further confirmed by a cross-section transmission electron microscopy study. Epitaxial YBa2Cu3O7-delta thin films deposited on YSZ/sapphire have T(c) and J(c) of up to 89 K and 1 x 10(6) A/cm2 at 77 K, respectively.

引用

页码：304 / 306

页数：3

共 17 条

[1] Y1BA2CU3O7-X THIN-FILMS GROWN ON SAPPHIRE WITH EPITAXIAL MGO BUFFER LAYERS
BEREZIN, AB
YUAN, CW
DELOZANNE, AL
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (01) : 90 - 92
[2] PROPERTIES OF EPITAXIAL YBA2CU3O7 THIN-FILMS ON AL2O3 (1BAR012)
CHAR, K
FORK, DK
GEBALLE, TH
LADERMAN, SS
TABER, RC
JACOWITZ, RD
BRIDGES, F
CONNELL, GAN
BOYCE, JB
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (08) : 785 - 787
[3] MICROWAVE SURFACE-RESISTANCE OF EPITAXIAL YBA2CU3O7 THIN-FILMS ON SAPPHIRE
CHAR, K
NEWMAN, N
GARRISON, SM
BARTON, RW
TABER, RC
LADERMAN, SS
JACOWITZ, RD
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (04) : 409 - 411
[4] PRECISE LATTICE CONSTANTS OF GERMANIUM, ALUMINUM, GALLIUM ARSENIDE, URANIUM, SULPHUR, QUARTZ AND SAPPHIRE
COOPER, AS
[J]. ACTA CRYSTALLOGRAPHICA, 1962, 15 (JUN): : 578 - &
[5] PREPARATION OF Y-BA-CU OXIDE SUPERCONDUCTOR THIN-FILMS USING PULSED LASER EVAPORATION FROM HIGH-TC BULK MATERIAL
DIJKKAMP, D
VENKATESAN, T
WU, XD
SHAHEEN, SA
JISRAWI, N
MINLEE, YH
MCLEAN, WL
CROFT, M
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (08) : 619 - 621
[6] FILBY JD, 1967, BRIT J APPL PYS, V18, P1537
[7] EPITAXIAL YTTRIA-STABILIZED ZIRCONIA ON HYDROGEN-TERMINATED SI BY PULSED LASER DEPOSITION
FORK, DK
FENNER, DB
CONNELL, GAN
PHILLIPS, JM
GEBALLE, TH
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (11) : 1137 - 1139
[8] EVALUATION OF CRYSTALLINE QUALITY OF HETEROEPITAXIAL YTTRIA-STABILIZED ZIRCONIA FILMS ON SILICON BY MEANS OF ION-BEAM CHANNELING
FUKUMOTO, H
IMURA, T
OSAKA, Y
NISHIYAMA, F
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (02) : 616 - 618
[9] HETEROEPITAXIAL GROWTH OF YTTRIA-STABILIZED ZIRCONIA (YSZ) ON SILICON
FUKUMOTO, H
IMURA, T
OSAKA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (08): : L1404 - L1405
[10] APPLICATION OF A NEAR COINCIDENCE SITE LATTICE THEORY TO THE ORIENTATIONS OF YBA2CU3O7-X GRAINS ON (001) MGO SUBSTRATES
HWANG, DM
RAVI, TS
RAMESH, R
CHAN, SW
CHEN, CY
NAZAR, L
WU, XD
INAM, A
VENKATESAN, T
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (16) : 1690 - 1692

← 1 2 →