THERMAL AND ACCELERATED (LESS-THAN-OR-EQUAL-TO-200 EV) IN DOPING OF SI(100) LAYERS DURING MOLECULAR-BEAM EPITAXY

被引：13

作者：

ROCKETT, A ^{[1
]}

KNALL, J ^{[1
]}

HASSAN, MA ^{[1
]}

SUNDGREN, JE ^{[1
]}

BARNETT, SA ^{[1
]}

GREENE, JE ^{[1
]}

机构：

[1] LINKOPING UNIV,DEPT PHYS,S-58183 LINKOPING,SWEDEN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.574002

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：900 / 901

页数：2

共 8 条

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[2] SI MOLECULAR-BEAM EPITAXY - A MODEL FOR TEMPERATURE-DEPENDENT INCORPORATION PROBABILITIES AND DEPTH DISTRIBUTIONS OF DOPANTS EXHIBITING STRONG SURFACE SEGREGATION [J].

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[3] MODELING OF DOPANT INCORPORATION, SEGREGATION, AND ION SURFACE INTERACTION EFFECTS DURING SEMICONDUCTOR FILM GROWTH BY MOLECULAR-BEAM EPITAXY AND PLASMA-BASED TECHNIQUES [J].

GREENE, JE ;

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BAJOR, G .

APPLICATIONS OF SURFACE SCIENCE, 1985, 22-3 (MAY) :520-544

[4] INDIUM INCORPORATION DURING THE GROWTH OF (100) SI BY MOLECULAR-BEAM EPITAXY - SURFACE SEGREGATION AND RECONSTRUCTION [J].

KNALL, J ;

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BARNETT, SA .

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[5]

KNALL J, SURF SCI

[6] SILICON MOLECULAR-BEAM EPITAXY WITH SIMULTANEOUS ION IMPLANT DOPING [J].

OTA, Y .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) :1102-1110

[7] A LOW-ENERGY, ULTRAHIGH-VACUUM, SOLID-METAL ION-SOURCE FOR ACCELERATED-ION DOPING DURING MOLECULAR-BEAM EPITAXY [J].

ROCKETT, A ;

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GREENE, JE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :306-313

[8]

ROCKETT A, 1985, J VAC SCI TECHNOL A, V3, P856

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