A HIGH-PERFORMANCE LATERAL BIPOLAR-TRANSISTOR FABRICATED ON SIMOX

被引：18

作者：

PARKE, SA

HU, CM

KO, PK

机构：

[1] Department of Electrical Engineering and Computer Science, University of California, Berkeley, CA

来源：

IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 01期

关键词：

D O I：

10.1109/55.215091

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Double-diffused. lateral n-p-n bipolar transistors were fabricated in a simple CMOS-like process using SIMOX silicon-on-insulator (SOI) substrates. Excellent device characteristics were achieved, with peak h(FE) = 120, BV(CEO) = 10 V, and peak f(T) = 4.5 GHz. The f(t) versus BV(CEO) trade-off was studied as a function of n- collector width. f(t) > 25 GHz is predicted for this structure with an improved device layout and optimized basewidth. This process may be easily extended in order to fabricate complementary BJT's in a C-BiCMOS thin-film SOI technology.

引用

页码：33 / 35

页数：3

共 7 条

[1] HALF-MICROMETER-BASE LATERAL BIPOLAR-TRANSISTORS MADE IN THIN SILICON-ON-INSULATOR FILMS [J].