HOLE TRANSPORT THROUGH MINIBANDS OF A SYMMETRICALLY STRAINED GEXSI1-X/SI SUPERLATTICE

被引：28

作者：

PARK, JS

KARUNASIRI, RPG

WANG, KL

RHEE, SS

CHERN, CH

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 16期

关键词：

D O I：

10.1063/1.101314

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1564 / 1566

页数：3

共 17 条

[1] THE N-CHANNEL SIGE/SI MODULATION-DOPED FIELD-EFFECT TRANSISTOR [J].

DAEMBKES, H ;

HERZOG, HJ ;

JORKE, H ;

KIBBEL, H ;

KASPAR, E .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) :633-638

[2] NEW TRANSPORT PHENOMENON IN A SEMICONDUCTOR SUPERLATTICE [J].

ESAKI, L ;

CHANG, LL .

PHYSICAL REVIEW LETTERS, 1974, 33 (08) :495-498

[3] STRAINED LAYER SI/SIGE SUPERLATTICES [J].

KASPER, E ;

HERZOG, HJ ;

JORKE, H ;

ABSTREITER, G .

SUPERLATTICES AND MICROSTRUCTURES, 1987, 3 (02) :141-146

[4] RESONANT TUNNELING IN SI/SI1-XGEX DOUBLE-BARRIER STRUCTURES [J].

LIU, HC ;

LANDHEER, D ;

BUCHANAN, M ;

HOUGHTON, DC .

APPLIED PHYSICS LETTERS, 1988, 52 (21) :1809-1811

[5] WAVE-GUIDE INFRARED PHOTODETECTORS ON A SILICON CHIP [J].

LURYI, S ;

PEARSALL, TP ;

TEMKIN, H ;

BEAN, JC .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (02) :104-107

[6] SILICON GERMANIUM-BASE HETEROJUNCTION BIPOLAR-TRANSISTORS BY MOLECULAR-BEAM EPITAXY [J].

PATTON, GL ;

IYER, SS ;

DELAGE, SL ;

TIWARI, S ;

STORK, JMC .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (04) :165-167

[7]

PAULUS MJ, IN PRESS J VAC SCI T

[8] AVALANCHE GAIN IN GEXSI1-X/SI INFRARED WAVE-GUIDE DETECTORS [J].

PEARSALL, TP ;

TEMKIN, H ;

BEAN, JC ;

LURYI, S .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (05) :330-332

[9] ENHANCEMENT-MODE AND DEPLETION-MODE PARA-CHANNEL GEXSI1-X MODULATION-DOPED FETS [J].

PEARSALL, TP ;

BEAN, JC .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (05) :308-310

[10] INDIRECT BAND-GAP AND BAND ALIGNMENT FOR COHERENTLY STRAINED SIXGE1-X BULK ALLOYS ON GERMANIUM (001) SUBSTRATES [J].

PEOPLE, R .

PHYSICAL REVIEW B, 1986, 34 (04) :2508-2510

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