PASSIVATION OF INP USING IN(PO3)3-CONDENSED PHOSPHATES - FROM OXIDE-GROWTH PROPERTIES TO METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR DEVICES

Fabrication of high-quality InP metal-insulator-semiconductor field-effect-transistor (MISFET) devices implies that adequate passivation of the surface can be achieved. In this paper, a passivation process of the InP surface, is presented using In(PO3)3-like condensed phosphates. An extensive study of the physicochemical and structural properties of these oxides and of the microscopic properties of its interface with InP is carried on, using a combination of various techniques (reflection high-energy electron diffraction, x-ray photoelectron spectroscopy, ellipsometry, and high-resolution transmission electron microscopy). High-quality MISFET devices have been fabricated; the high performances obtained in terms of transconductance and stability are well correlated with the good intrinsic properties of the oxides.