PASSIVATION OF INP USING IN(PO3)3-CONDENSED PHOSPHATES - FROM OXIDE-GROWTH PROPERTIES TO METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR DEVICES

被引:31
作者
ROBACH, Y
BESLAND, MP
JOSEPH, J
HOLLINGER, G
VIKTOROVITCH, P
FERRET, P
PITAVAL, M
FALCOU, A
POST, G
机构
[1] ECOLE CENT LYON,ELECTR AUTOMAT & MESURES ELECT LAB,CNRS,UA 848,F-69131 ECULLY,FRANCE
[2] UNIV LYON 1,DEPT PHYS MAT,F-69622 VILLEURBANNE,FRANCE
[3] CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
关键词
D O I
10.1063/1.351002
中图分类号
O59 [应用物理学];
学科分类号
摘要
Fabrication of high-quality InP metal-insulator-semiconductor field-effect-transistor (MISFET) devices implies that adequate passivation of the surface can be achieved. In this paper, a passivation process of the InP surface, is presented using In(PO3)3-like condensed phosphates. An extensive study of the physicochemical and structural properties of these oxides and of the microscopic properties of its interface with InP is carried on, using a combination of various techniques (reflection high-energy electron diffraction, x-ray photoelectron spectroscopy, ellipsometry, and high-resolution transmission electron microscopy). High-quality MISFET devices have been fabricated; the high performances obtained in terms of transconductance and stability are well correlated with the good intrinsic properties of the oxides.
引用
收藏
页码:2981 / 2992
页数:12
相关论文
共 41 条
[11]   THE INTERFACE AND ITS ROLE IN SURFACE-PARALLEL TRANSPORT [J].
FERRY, DK .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :956-959
[12]   INTERFACE STATES OF SI-SIO2 SYSTEM AND THEIR SEPARATION IN GROUPS [J].
FLIETNER, H ;
FUSSEL, W ;
SINH, ND .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 43 (01) :K99-K101
[13]   ANODIC-OXIDATION OF GAAS IN MIXED SOLUTIONS OF GLYCOL AND WATER [J].
HASEGAWA, H ;
HARTNAGEL, HL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) :713-723
[14]   UNIFIED DISORDER INDUCED GAP STATE MODEL FOR INSULATOR-SEMICONDUCTOR AND METAL-SEMICONDUCTOR INTERFACES [J].
HASEGAWA, H ;
OHNO, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :1130-1138
[15]   CONTROL OF COMPOUND SEMICONDUCTOR INSULATOR INTERFACES BY AN ULTRATHIN MOLECULAR-BEAM EPITAXY SI LAYER [J].
HASEGAWA, H ;
AKAZAWA, M ;
ISHII, H ;
MATSUZAKI, K .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04) :870-878
[16]   ON THE ELECTRICAL-PROPERTIES OF COMPOUND SEMICONDUCTOR INTERFACES IN METAL-INSULATOR SEMICONDUCTOR STRUCTURES AND THE POSSIBLE ORIGIN OF INTERFACE STATES [J].
HASEGAWA, H ;
SAWADA, T .
THIN SOLID FILMS, 1983, 103 (1-2) :119-140
[17]   ON THE CHEMISTRY OF PASSIVATED OXIDE-INP INTERFACES [J].
HOLLINGER, G ;
JOSEPH, J ;
ROBACH, Y ;
BERGIGNAT, E ;
COMMERE, B ;
VIKTOROVITCH, P ;
FROMENT, M .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :1108-1112
[18]   THE PASSIVATION OF INP BY ARSENIC SURFACE STABILIZATION AND AL2O3 DEPOSITION - CORRELATIONS BETWEEN INTERFACE CHEMISTRY AND CAPACITANCE MEASUREMENTS [J].
HOLLINGER, G ;
BLANCHET, R ;
GENDRY, M ;
SANTINELLI, C ;
SKHEYTA, R ;
VIKTOROVITCH, P .
JOURNAL OF APPLIED PHYSICS, 1990, 67 (09) :4173-4182
[19]   ON THE NATURE OF OXIDES ON INP-SURFACES [J].
HOLLINGER, G ;
BERGIGNAT, E ;
JOSEPH, J ;
ROBACH, Y .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06) :2082-2088
[20]   SULFUR AS A SURFACE PASSIVATION FOR INP [J].
IYER, R ;
CHANG, RR ;
LILE, DL .
APPLIED PHYSICS LETTERS, 1988, 53 (02) :134-136