COMPARISON OF THE PROPERTIES OF ION-PLATED TITANIUM CARBIDE FILMS PREPARED BY DIFFERENT ACTIVATION METHODS

被引：17

作者：

FUKUTOMI, M

FUJITSUKA, M

OKADA, M

机构：

来源：

THIN SOLID FILMS | 1984年 / 120卷 / 04期

关键词：

D O I：

10.1016/0040-6090(84)90243-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：283 / 292

页数：10

共 22 条

[1]

[Anonymous], 1967, POWDER DIFFRACTION F

[2] ACTIVATED REACTIVE EVAPORATION PROCESS FOR HIGH RATE DEPOSITION OF COMPOUNDS [J].

BUNSHAH, RF ;

RAGHURAM, AC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1972, 9 (06) :1385-&

[3] REACTIVE ION PLATING (RIP) WITH AUXILIARY DISCHARGE AND THE INFLUENCE OF THE DEPOSITION CONDITIONS ON THE FORMATION AND PROPERTIES OF TIN FILMS [J].

FLEISCHER, W ;

SCHULZE, D ;

WILBERG, R ;

LUNK, A ;

SCHRADE, F .

THIN SOLID FILMS, 1979, 63 (02) :347-356

[4] EFFECT OF SUBSTRATE-TEMPERATURE CONTROL DURING DEPOSITION ON THE ADHERENCE OF ION-PLATED TITANIUM CARBIDE AND VANADIUM CARBIDE FILMS ON MOLYBDENUM [J].

FUKUTOMI, M ;

FUJITSUKA, M ;

KITAJIMA, M ;

SHIKAMA, T ;

OKADA, M .

THIN SOLID FILMS, 1981, 80 (1-3) :271-277

[5] SILICON-NITRIDE COATINGS ON MOLYBDENUM BY RF REACTIVE ION PLATING [J].

FUKUTOMI, M ;

KITAJIMA, M ;

OKADA, M ;

WATANABE, R .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (09) :1420-1424

[6]

FUKUTOMI M, 1982, 7TH P INT C VAC MET, P711

[7]

Kawashimo Y., 1983, SHINKU, V26, P511

[8]

KOBAYASHI M, 1978, THIN SOLID FILMS, V54, P67, DOI 10.1016/0040-6090(78)90278-X

[9] FORMATION OF THICK TITANIUM CARBIDE FILMS BY HOLLOW-CATHODE DISCHARGE REACTIVE DEPOSITION PROCESS [J].

KOMIYA, S ;

UMEZU, N ;

NARUSAWA, T .

THIN SOLID FILMS, 1978, 54 (01) :51-60

[10]

LEDER LB, 1974, MET FINISH, V72, P41

← 1 2 3 →