GROWTH OF MOSI2 WITH PREFERENTIAL ORIENTATION ON (100) SILICON

被引：24

作者：

PERIO, A

TORRES, J

BOMCHIL, G

DAVITAYA, FA

PANTEL, R

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 08期

关键词：

D O I：

10.1063/1.95426

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：857 / 859

页数：3

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