THEORETICAL SIMULATION OF SCANNING-TUNNELING-MICROSCOPY IMAGES OF THE GAAS(001) BETA(2X4) AND BETA(4X2) SURFACES

被引：13

作者：

BASS, JM

MATTHAI, CC

机构：

[1] Department of Physics and Astronomy, University of Wales, College of Cardiff, Cardiff CF2 3YB

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.50.11212

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using the first-principle ab initio pseudopotential method and the Bardeen transfer Hamiltonian approximation, we have calculated scanning-tunneling-microscopy images of the fully relaxed GaAs(001) beta(2x4) and beta(4x2) surfaces. Our calculation included a four-atom Al cluster to represent the tip. We present the results that we obtained for these two different surfaces at different tip-surface bias voltages and discuss the relationship between the simulated scanning-tunneling-microscopy images and the surface charge density within the given energy range with respect to the Fermi level.

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页码：11212 / 11215

页数：4

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