TIME-RESOLVED INVESTIGATION OF LARGE-AREA EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS-SILICON LAYERS

被引：7

作者：

WAGNER, M

GEILER, HD

GOTZ, G

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1985年 / 92卷 / 02期

关键词：

D O I：

10.1002/pssa.2210920210

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：413 / 420

页数：8

共 10 条

[1] EXPLOSIVE LIQUID-PHASE CRYSTALLIZATION OF THIN SILICON FILMS DURING PULSE HEATING [J].

ANDRA, G ;

GEILER, HD ;

GOTZ, G ;

HEINIG, KH ;

WOITTENNEK, H .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 74 (02) :511-515

[2]

BENSAHEL D, 1983, P S MATER RES SOC, V13, P165

[3]

DONNOVAN EP, 1983, APPL PHYS LETT, V42, P698

[4]

Gilmer G. H., 1980, LASER ELECTRON BEAM, P227

[5] PULSE LASER-INDUCED HIGH-TEMPERATURE SOLID-PHASE ANNEALING OF ARSENIC IMPLANTED SILICON [J].

GOTZ, G ;

GEILER, HD ;

WAGNER, M .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 73 (01) :145-151

[6]

HOPPER MA, 1975, J ELECTROCHEM SOC, V122, P1217

[7]

Papa T., 1982, Nuovo Cimento D, V1D, P129, DOI 10.1007/BF02450073

[8]

Roth J. A., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P169

[9] CONTROL OF EXPLOSIVE LIQUID-PHASE CRYSTALLIZATION OF ION-IMPLANTED SILICON LAYERS BY DOUBLE PULSE LASER IRRADIATION [J].

WAGNER, M ;

GEILER, HD ;

ANDRA, G ;

GOTZ, G .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 83 (01) :K1-K3

[10] BULK NUCLEATION AND AMORPHOUS PHASE FORMATION IN HIGHLY UNDERCOOLED MOLTEN SILICON [J].

WOOD, RF ;

LOWNDES, DH ;

NARAYAN, J .

APPLIED PHYSICS LETTERS, 1984, 44 (08) :770-772

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