PULSE LASER-INDUCED HIGH-TEMPERATURE SOLID-PHASE ANNEALING OF ARSENIC IMPLANTED SILICON

被引：7

作者：

GOTZ, G

GEILER, HD

WAGNER, M

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1982年 / 73卷 / 01期

关键词：

D O I：

10.1002/pssa.2210730118

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：145 / 151

页数：7

共 6 条

[1] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J].

CSEPREGI, L ;

KENNEDY, EF ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3906-3911

[2]

CSEPREGI L, 1977, J APPL PHYS, V48, P4243

[3] EFFECTS OF THERMAL ANNEALING ON THE REFRACTIVE-INDEX OF AMORPHOUS-SILICON PRODUCED BY ION-IMPLANTATION [J].

FREDRICKSON, JE ;

WADDELL, CN ;

SPITZER, WG .

APPLIED PHYSICS LETTERS, 1982, 40 (02) :172-174

[4] INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS [J].

KENNEDY, EF ;

CSEPREGI, L ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4241-4246

[5] DIRECT OBSERVATION OF LASER-INDUCED SOLID-PHASE EPITAXIAL CRYSTALLIZATION BY TIME-RESOLVED OPTICAL REFLECTIVITY [J].

OLSON, GL ;

KOKOROWSKI, SA ;

MCFARLANE, RA ;

HESS, LD .

APPLIED PHYSICS LETTERS, 1980, 37 (11) :1019-1021

[6] NEAR-SURFACE REGROWTH RATE EFFECTS IN HIGH-DOSE ION-IMPLANTED (100) SILICON [J].

WILLIAMS, JS ;

ELLIMAN, RG .

APPLIED PHYSICS LETTERS, 1980, 37 (09) :829-831

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