NEAR-SURFACE REGROWTH RATE EFFECTS IN HIGH-DOSE ION-IMPLANTED (100) SILICON

被引:38
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WILLIAMS, JS
ELLIMAN, RG
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10.1063/1.92096
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O59 [应用物理学];
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页码:829 / 831
页数:3
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[1]   REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J].
CSEPREGI, L ;
KENNEDY, EF ;
GALLAGHER, TJ ;
MAYER, JW ;
SIGMON, TW .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4234-4240
[2]   REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J].
CSEPREGI, L ;
MAYER, JW ;
SIGMON, TW .
APPLIED PHYSICS LETTERS, 1976, 29 (02) :92-93
[3]   CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI [J].
CSEPREGI, L ;
MAYER, JW ;
SIGMON, TW .
PHYSICS LETTERS A, 1975, 54 (02) :157-158
[4]   INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS [J].
KENNEDY, EF ;
CSEPREGI, L ;
MAYER, JW ;
SIGMON, TW .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4241-4246
[5]   ELECTRON-MICROSCOPY STUDY OF DEFECT STRUCTURES IN RECRYSTALLIZED AMORPHOUS LAYERS OF SELF-ION-IRRADIATED (111) SILICON [J].
RECHTIN, MD ;
PRONKO, PP ;
FOTI, G ;
CSEPREGI, L ;
KENNEDY, EF ;
MAYER, JW .
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1978, 37 (05) :605-620
[6]   EPITAXIAL REGROWTH OF AR-IMPLANTED AMORPHOUS SILICON [J].
REVESZ, P ;
WITTMER, M ;
ROTH, J ;
MAYER, JW .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (10) :5199-5206
[7]   VISIBLE INTERFERENCE EFFECTS IN SILICON CAUSED BY HIGH-CURRENT-HIGH-DOSE IMPLANTATION [J].
SEIDEL, TE ;
PASTEUR, GA ;
TSAI, JCC .
APPLIED PHYSICS LETTERS, 1976, 29 (10) :648-651
[8]   RECRYSTALLIZATION OF ION-IMPLANTED SILICON LAYERS .1. PB-ION IMPLANTED SI [J].
WILLIAMS, JS ;
CHRISTODOULIDES, CE ;
GRANT, WA ;
ANDREW, R ;
BRAWN, JR ;
BOOTH, M .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 32 (1-2) :55-66
[9]   APPLICATION OF HIGH-RESOLUTION RUTHERFORD BACKSCATTERING TECHNIQUES TO NEAR-SURFACE ANALYSIS [J].
WILLIAMS, JS .
NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3) :207-217
[10]   THE INFLUENCE OF HIGH IMPLANT CONCENTRATION ON SOLID-PHASE EPITAXIAL REGROWTH IN (100) AND (111) SILICON [J].
WILLIAMS, JS ;
CHRISTODOULIDES, CE ;
GRANT, WA .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4) :157-160