GROWTH OF ZNSE THIN-FILMS ON ITO GLASS SUBSTRATES BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：3

作者：

HSU, CT ^{[1
]}

LIN, YJ ^{[1
]}

SU, YK ^{[1
]}

YOKOYAMA, M ^{[1
]}

机构：

[1] NATL YUNLIN POLYTECH INST,DEPT ELECT ENGN,HUWEI,TAIWAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 125卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(92)90280-V

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Epitaxial layers of ZnSe on ITO/glass (glass coated indium tin oxide) were grown by low-pressure metalorganic chemical vapor deposition. The reactants used are dimethylzinc (DMZn) and hydrogen selenide (H2Se). The crystallinity of ZnSe thin films, which depends on the [H2Se]/[DMZn] ratio and substrate temperature was investigated. The full width at half maximum (FWHM) of X-ray Cu Kalpha (111) ZnSe diffraction reaches the minimum value of 0.17-degrees at optimal growth conditions. In this experiment, the optimum growth conditions of ZnSe films are 300-degrees-C, 5 Torr and VI/II ratio of about 4. The lattice constant and energy gap of the ZnSe thin film obtained were 5.686 angstrom and 2.6% eV, respectively.

引用

页码：420 / 424

页数：5

共 14 条

[1]

BLANCONNIER P, 1978, THIN SOLID FILMS, V55, P375, DOI 10.1016/0040-6090(78)90154-2

[2] FREE EXCITON EMISSION IN FORWARD BIASED ZNSE MIS DIODES [J].