ELECTRON-IMPURITY TUNNELING IN SELECTIVELY DOPED N-TYPE ALXGA1-XAS/GAAS HETEROSTRUCTURES

被引：40

作者：

SCHUBERT, EF

FISCHER, A

PLOOG, K

机构：

来源：

PHYSICAL REVIEW B | 1985年 / 31卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.31.7937

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7937 / 7946

页数：10

共 30 条

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