PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITED SIO2/INP INTERFACE

被引:51
作者
WAGER, JF
WILMSEN, CW
机构
关键词
D O I
10.1063/1.331416
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:5789 / 5797
页数:9
相关论文
共 39 条
[1]   COMPOSITION, CHEMICAL BONDING, AND CONTAMINATION OF LOW-TEMPERATURE SIOXNY INSULATING FILMS [J].
ANDERSON, GW ;
SCHMIDT, WA ;
COMAS, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) :424-430
[2]  
BAGLEE DA, 1980, I PHYS C SER, V56, P259
[3]   XPS STUDY OF CHEMICALLY ETCHED GAAS AND INP [J].
BERTRAND, PA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (01) :28-33
[4]   SURFACE MODIFICATION OF INP BY PLASMA TECHNIQUES USING HYDROGEN AND OXYGEN [J].
CLARK, DT ;
FOK, T .
THIN SOLID FILMS, 1981, 78 (03) :271-278
[5]   AN INVESTIGATION BY ELECTRON-SPECTROSCOPY FOR CHEMICAL-ANALYSIS OF CHEMICAL TREATMENTS OF THE (100) SURFACE OF N-TYPE INP EPITAXIAL LAYERS FOR LANGMUIR FILM DEPOSITION [J].
CLARK, DT ;
FOK, T ;
ROBERTS, GG ;
SYKES, RW .
THIN SOLID FILMS, 1980, 70 (02) :261-283
[6]  
ELLSWORTH DL, 1981, THESIS COLORADO STAT
[7]   EVAPORATION OF INP UNDER KNUDSEN (EQUILIBRIUM) AND LANGMUIR (FREE) EVAPORATION CONDITIONS [J].
FARROW, RFC .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1974, 7 (17) :2436-2448
[8]   TRANSPORT OF ELECTRONS IN QUANTIZED INVERSION AND ACCUMULATION LAYERS IN III-V COMPOUNDS [J].
FERRY, DK .
THIN SOLID FILMS, 1979, 56 (1-2) :243-252
[9]   ELECTRON MEAN ESCAPE DEPTHS FROM X-RAY PHOTOELECTRON-SPECTRA OF THERMALLY OXIDIZED SILICON DIOXIDE FILMS ON SILICON [J].
FLITSCH, R ;
RAIDER, SI .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01) :305-308
[10]   INP-SIO2 MIS STRUCTURE WITH REDUCED INTERFACE STATE DENSITY NEAR CONDUCTION-BAND [J].
FRITZSCHE, D .
ELECTRONICS LETTERS, 1978, 14 (03) :51-52