THE ROLE OF THIN-FILMS IN INTEGRATED SOLID-STATE SENSORS

被引：5

作者：

WISE, KD

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.573844

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：617 / 622

页数：6

共 33 条

[1] ISFETS USING INORGANIC GATE THIN-FILMS [J].

ABE, H ;

ESASHI, M ;

MATSUO, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (12) :1939-1944

[2]

AKIYAMA S, 1985, IEEE VLSI S, P28

[3] DEPOSITION TECHNIQUES FOR DIELECTRIC FILMS ON SEMICONDUCTOR-DEVICES [J].

AMICK, JA ;

SCHNABLE, GL ;

VOSSEN, JL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (05) :1053-1063

[4] 2/3-INCH FORMAT MOS SINGLE-CHIP COLOR IMAGER [J].

AOKI, M ;

ANDO, H ;

OHBA, S ;

TAKEMOTO, I ;

NAGAHARA, S ;

NAKANO, T ;

KUBO, M ;

FUJITA, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) :745-750

[5] DEPENDENCE OF INTERFACE STATE PROPERTIES OF ELECTROLYTE-SIO2-SI STRUCTURES ON PH [J].

BARABASH, PR ;

COBBOLD, RSC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (01) :102-108

[6] DEVELOPMENT OF AN ION-SENSITIVE SOLID-STATE DEVICE FOR NEUROPHYSIOLOGICAL MEASUREMENTS [J].

BERGVELD, P .

IEEE TRANSACTIONS ON BIOMEDICAL ENGINEERING, 1970, BM17 (01) :70-&

[7]

BROWN RB, 1985, INT C SOL STAT SENS, P125

[8] KINETICS AND DRIFT OF GATE VOLTAGES FOR ELECTROLYTE-BATHED CHEMICALLY SENSITIVE SEMICONDUCTOR-DEVICES [J].

BUCK, RP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (01) :108-115

[9]

CARAS SD, 1985, IEEE INT C SOLID STA, P158

[10]

CHANG SC, 1985, IEEE INT C SOLID STA, P381

← 1 2 3 4 →