ANOMALOUS LUMINESCENCE DEGRADATION BEHAVIOR OF CHEMICALLY OXIDIZED POROUS SILICON

被引：13

作者：

CZAPUTA, R ^{[1
]}

FRITZL, R ^{[1
]}

POPITSCH, A ^{[1
]}

机构：

[1] KARL FRANZENS UNIV GRAZ, INST ANORGAN CHEM, A-8010 GRAZ, AUSTRIA

来源：

THIN SOLID FILMS | 1995年 / 255卷 / 1-2期

关键词：

LUMINESCENCE; OXIDATION; SILICON; SURFACE DEFECTS;

D O I：

10.1016/0040-6090(94)05656-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

For nanoporous silicon treated with nitric acid, a remarkable photoluminescence enhancement effect is observed. The enhancement is controlled by irradiation with visible light. Photoluminescence infrared spectroscopy and electron spin resonance are used to compare the material, modified by nitric acid with as-prepared porous silicon and oxidized by irradiation in air. Characteristic changes in the infrared spectrum during the enhancement indicate that an unidentified hydrogen source, activated by light, could terminate the surface dangling bond centres formed by the HNO3 oxidation process.

引用

页码：212 / 215

页数：4

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