ORIGIN AND CHARACTERISTICS OF ALPHA-PARTICLE-INDUCED PERMANENT JUNCTION LEAKAGE

被引：7

作者：

TAKEUCHI, K ^{[1
]}

SHIMOHIGASHI, K ^{[1
]}

KOZUKA, H ^{[1
]}

TOYABE, T ^{[1
]}

ITOH, K ^{[1
]}

KUROSAWA, H ^{[1
]}

机构：

[1] HITACHI LTD,CTR DEVICE DEV,KOKUBUNJI,TOKYO 185,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 03期

关键词：

D O I：

10.1109/16.47779

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The origin and characteristics of the permanent junction leakage caused by alpha-particle irradiation and its impact on the reliability of DRAM cells have been investigated. The results obtained are as follows: 1) Three types of leakage are important in the alpha-particle-induced junction leakage current: the generation current that is mainly caused by divacancies (VV) induced in p-type substrates, the enhanced peripheral leakage current due to weak avalanche, and the peripheral leakage current caused by buildup of surface states. 2) The dominant component in the three types of leakage is determined by the reverse bias across the junction during both irradiation and measurements. 3) The hard error rates in the DRAM cell caused by the alpha-particle-induced junction leakage are strongly related to the alpha-particle-induced soft-error rates. As long as the DRAM cell is designed to provide high immunity to the soft errors, the hard errors are not a serious problem. © 1990 IEEE

引用

页码：730 / 736

页数：7

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