NICKEL AND COPPER ON CLEAVED INDIUM-PHOSPHIDE - STRUCTURE, METALLURGY AND ELECTRONIC-PROPERTIES

被引:15
作者
HUGHES, GJ
MCKINLEY, A
WILLIAMS, RH
机构
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1983年 / 16卷 / 12期
关键词
D O I
10.1088/0022-3719/16/12/024
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:2391 / 2406
页数:16
相关论文
共 29 条
[1]   UNIFIED THEORY OF POINT-DEFECT ELECTRONIC STATES, CORE EXCITONS, AND INTRINSIC ELECTRONIC STATES AT SEMICONDUCTOR SURFACES [J].
ALLEN, RE ;
DOW, JD .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :383-387
[2]   DISSOCIATIVE SURFACE-REACTIONS AT SCHOTTKY AND HETEROJUNCTION INTERFACES WITH ALAS AND GAAS [J].
BAUER, RS ;
BACHRACH, RZ ;
HANSSON, GV ;
CHIARADIA, P .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :674-680
[3]   SCHOTTKY-BARRIER HEIGHT OF AU ON N-GA1-XALXAS AS A FUNCTION OF ALAS CONTENT [J].
BEST, JS .
APPLIED PHYSICS LETTERS, 1979, 34 (08) :522-527
[4]   ROOM-TEMPERATURE FORMATION OF THE AG/GAAS (110) INTERFACE [J].
BOLMONT, D ;
CHEN, P ;
PROIX, F ;
SEBENNE, CA .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (16) :3639-3648
[5]   ABRUPTNESS OF SEMICONDUCTOR-METAL INTERFACES [J].
BRILLSON, LJ ;
BRUCKER, CF ;
STOFFEL, NG ;
KATNANI, AD ;
MARGARITONDO, G .
PHYSICAL REVIEW LETTERS, 1981, 46 (13) :838-841
[6]  
BRILLSON LJ, 1978, J VAC SCI TECHNOL, V15, P1378, DOI 10.1116/1.569792
[7]  
BRILLSON LJ, 1979, J VAC SCI TECHNOL, V16, P1137, DOI 10.1116/1.570177
[8]   VACANCIES NEAR SEMICONDUCTOR SURFACES [J].
DAW, MS ;
SMITH, DL .
PHYSICAL REVIEW B, 1979, 20 (12) :5150-5156
[9]   SURFACE VACANCIES IN INP AND GAAIAS [J].
DAW, MS ;
SMITH, DL .
APPLIED PHYSICS LETTERS, 1980, 36 (08) :690-692
[10]   SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL [J].
FREEOUF, JL ;
WOODALL, JM .
APPLIED PHYSICS LETTERS, 1981, 39 (09) :727-729