MEASUREMENT OF SEMICONDUCTOR INSULATOR INTERFACE STATES BY CONSTANT-CAPACITANCE, DEEP-LEVEL TRANSIENT SPECTROSCOPY

被引：122

作者：

JOHNSON, NM

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 21卷 / 02期

关键词：

D O I：

10.1116/1.571768

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：303 / 314

页数：12

共 34 条

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