DETERMINATION OF TRAPPING AND RECOMBINATION PROCESSES IN SPUTTERED HYDROGENATED AMORPHOUS-SILICON FROM STEADY-STATE AND TRANSIENT PHOTOCONDUCTIVITY

被引：4

作者：

HAMDI, H

DENEUVILLE, A

机构：

来源：

THIN SOLID FILMS | 1985年 / 125卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(85)90387-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1 / 7

页数：7

共 8 条

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[3]

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[5] LEVEL OF DANGLING BOND CENTERS AND ITS BROADENING DUE TO DISORDER IN AMORPHOUS-SILICON AS ELUCIDATED BY OPTICALLY DETECTED MAGNETIC-RESONANCE MEASUREMENTS [J].

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[8] PHOTOCONDUCTIVITY, TRAPPING, AND RECOMBINATION IN DISCHARGE-PRODUCED, HYDROGENATED AMORPHOUS-SILICON [J].

WRONSKI, CR ;

DANIEL, RE .

PHYSICAL REVIEW B, 1981, 23 (02) :794-804

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