(K)RIGHT ARROW-NONCONSERVING TRANSITION IN HEAVILY DOPED LPE GROWN N-TYPE IN0.5GA0.5P

被引：3

作者：

JEONG, BS

CHOI, JS

CHANG, SK

CHUNG, CH

PARK, HL

LEE, HJ

LEE, JI

LIM, H

KIM, SY

机构：

[1] YONSEI UNIV,DEPT PHYS,SEOUL 120749,SOUTH KOREA

[2] JUNBOOK NATL UNIV,DEPT PHYS,JUNJU,SOUTH KOREA

[3] KOREA ADV INST SCI & TECHNOL,OPTOELECTR LAB,SEOUL 131,SOUTH KOREA

来源：

SOLID STATE COMMUNICATIONS | 1992年 / 82卷 / 01期

关键词：

D O I：

10.1016/0038-1098(92)90396-Q

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Heavily unintentionally doped n-type InGaP was grown by LPE technique. Temperature and excitation power dependence of PL measurements were carried out to investigate the first observe 2.107 eV PL peak in In0.5Ga0.5P and we confirmed the first k-conserving optical transition in In0.5Ga0.5P. Also the unintentionally doped major impurity was found to be sulfur through XRF technique.

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页码：7 / 12

页数：6

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