METALORGANIC MOLECULAR-BEAM EPITAXY OF INGAP

[1] ORIGIN OF OVAL DEFECTS IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF CRYSTAL GROWTH, 1985, 73 (01) : 117 - 122

[2] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAIP VISIBLE LASER-DIODES OPERATING AT 0.66-0.68 MU-M AT ROOM TEMPERATURES [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 6958 - 6964

[3] HIGH-POWER (1.4W) ALGAINP GRADED-INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE VISIBLE (LAMBDA-APPROXIMATELY-658-NM) LASER [J]. APPLIED PHYSICS LETTERS, 1987, 51 (21) : 1658 - 1660

[4] EFFECT OF WELL SIZE FLUCTUATION ON PHOTO-LUMINESCENCE SPECTRUM OF ALAS-GAAS SUPER-LATTICES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (10): : 1489 - 1492

[5] STUDIES OF GAXIN1-XP LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY - EFFECTS OF V/III RATIO AND GROWTH TEMPERATURE [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 367 - 373

[6] SELECTIVE-AREA EPITAXY OF GAAS THROUGH SILICON DIOXIDE WINDOWS BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1986, 48 (02) : 142 - 144

[7] HORIKOSHI Y, 1986, JPN J APPL PHYS, V25, P6868

[8] 680-NM BAND GAINP/ALGAINP TAPERED STRIPE LASER [J]. APPLIED PHYSICS LETTERS, 1987, 51 (20) : 1572 - 1573

[9] KAWAGUCHI Y, 1985, JPN J APPL PHYS, V4, P1221

[10] VOLATILE METAL-OXIDE INCORPORATION IN LAYERS OF GAAS, GA1-XALXAS AND RELATED-COMPOUNDS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1981, 38 (06) : 427 - 429

[1] ORIGIN OF OVAL DEFECTS IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF CRYSTAL GROWTH, 1985, 73 (01) : 117 - 122

[2] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAIP VISIBLE LASER-DIODES OPERATING AT 0.66-0.68 MU-M AT ROOM TEMPERATURES [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 6958 - 6964

[3] HIGH-POWER (1.4W) ALGAINP GRADED-INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE VISIBLE (LAMBDA-APPROXIMATELY-658-NM) LASER [J]. APPLIED PHYSICS LETTERS, 1987, 51 (21) : 1658 - 1660

[4] EFFECT OF WELL SIZE FLUCTUATION ON PHOTO-LUMINESCENCE SPECTRUM OF ALAS-GAAS SUPER-LATTICES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (10): : 1489 - 1492

[5] STUDIES OF GAXIN1-XP LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY - EFFECTS OF V/III RATIO AND GROWTH TEMPERATURE [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 367 - 373

[6] SELECTIVE-AREA EPITAXY OF GAAS THROUGH SILICON DIOXIDE WINDOWS BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1986, 48 (02) : 142 - 144

[7] HORIKOSHI Y, 1986, JPN J APPL PHYS, V25, P6868

[8] 680-NM BAND GAINP/ALGAINP TAPERED STRIPE LASER [J]. APPLIED PHYSICS LETTERS, 1987, 51 (20) : 1572 - 1573

[9] KAWAGUCHI Y, 1985, JPN J APPL PHYS, V4, P1221

[10] VOLATILE METAL-OXIDE INCORPORATION IN LAYERS OF GAAS, GA1-XALXAS AND RELATED-COMPOUNDS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1981, 38 (06) : 427 - 429