SELECTIVE-AREA EPITAXY OF GAAS THROUGH SILICON DIOXIDE WINDOWS BY MOLECULAR-BEAM EPITAXY

被引：15

作者：

HONG, JM

WANG, S

SANDS, T

WASHBURN, J

FLOOD, JD

MERZ, JL

LOW, T

机构：

[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720

[3] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

[4] HEWLETT PACKARD LABS,PALO ALTO,CA 94304

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 02期

关键词：

D O I：

10.1063/1.96977

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：142 / 144

页数：3

相关论文

共 17 条

[1] PLANAR ISOLATED GAAS DEVICES PRODUCED BY MOLECULAR-BEAM EPITAXY
BALLAMY, WC
CHO, AY
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (04) : 481 - 484
[2] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9
[3] GAAS PLANAR TECHNOLOGY BY MOLECULAR-BEAM EPITAXY (MBE)
CHO, AY
BALLAMY, WC
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) : 783 - 785
[4] GILLEO MA, 1970, J LUMIN, V1, P562
[5] LATERAL DEFINITION OF MONO-CRYSTALLINE GAAS PREPARED BY MOLECULAR-BEAM EPITAXY
HIYAMIZU, S
NANBU, K
FUJII, T
SAKURAI, T
HASHIMOTO, H
RYUZAN, O
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (07) : 1562 - 1567
[6] Hong J.H., UNPUB
[7] KUNZEL H, 1980, APPL PHYS LETT, V37, P416, DOI 10.1063/1.91927
[8] SINGLE-TRANSVERSE-MODE INJECTION-LASERS WITH EMBEDDED STRIPE LAYER GROWN BY MOLECULAR-BEAM EPITAXY
LEE, TP
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (03) : 164 - 166
[9] ASPECTS OF GAAS SELECTIVE AREA GROWTH BY MOLECULAR-BEAM EPITAXY WITH PATTERNING BY SIO2 MASKING
LI, AZ
CHENG, H
MILNES, AG
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (10) : 2072 - 2075
[10] TAPER COUPLERS FOR GAAS-ALXGA1-XAS WAVEGUIDE LAYERS PRODUCED BY LIQUID-PHASE AND MOLECULAR-BEAM EPITAXY
MERZ, JL
LOGAN, RA
WIEGMANN, W
GOSSARD, AC
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (06) : 337 - 340