HIGH-CARBON DOPING OF GAAS USING TRISDIMETHYLAMINOARSENIC AND TRIMETHYLGALLIUM IN CHEMICAL BEAM EPITAXY

被引：5

作者：

LAMARE, B

BENCHIMOL, JL

JUHEL, M

AKAMATSU, B

LEGAY, P

ALEXANDRE, F

机构：

[1] France Telecom, CNET PAB, Laboratoire de Bagneux, F-92225 Bagneux Cedex

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 141卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(94)90236-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The growth of GaAs by chemical beam epitaxy (CBE) using trisdimethylaminoarsenic (DMAAs) and trimethylgallium (TMG) sources was investigated. DMAAs was introduced into the chamber directly from its vapour pressure, without precracking. During GaAs growth, the chamber pressure was in the 10(-7) Torr range, at least one order of magnitude lower than with arsine. The DMAAs + TMG source combination resulted in p-type layers in the range 10(18) - 10(19) cm-3. From cathodoluminescence measurements these GaAs layers proved to be as good as those grown with arsine. This study shows that TMG can be suitable p-type dopant for GaAs when combined with DMAAs.

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收藏

页码：347 / 351

页数：5

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