ELECTRONIC STATES AND MICROSTRUCTURE AT THE SILICIDE-SILICON INTERFACE

被引:34
作者
HO, PS
RUBLOFF, GW
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D O I
10.1016/0040-6090(82)90324-8
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:433 / 446
页数:14
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