PHOTO-LUMINESCENCE LIFETIME, ABSORPTION AND EXCITATION SPECTROSCOPY MEASUREMENTS ON ISOELECTRONIC BOUND EXCITONS IN BERYLLIUM-DOPED SILICON

被引：36

作者：

THEWALT, MLW

WATKINS, SP

ZIEMELIS, UO

LIGHTOWLERS, EC

HENRY, MO

机构：

[1] UNIV LONDON KINGS COLL,WHEATSTONE PHYS LAB,LONDON WC2R 2LS,ENGLAND

[2] NATL INST HIGHER EDUC,SCH PHYS SCI,DUBLIN 9,IRELAND

来源：

SOLID STATE COMMUNICATIONS | 1982年 / 44卷 / 05期

关键词：

D O I：

10.1016/0038-1098(82)90557-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：573 / 577

页数：5

共 10 条

[1] THE 1.045 EV VIBRONIC BAND IN SILICON DOPED WITH LITHIUM [J].

CANHAM, L ;

DAVIES, G ;

LIGHTOWLERS, EC .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (27) :L757-L762

[2]

Canham L., 1981, I PHYS CON SER, V59, P211

[3] STUDY OF BERYLLIUM AND BERYLLIUM-LITHIUM COMPLEXES IN SINGLE-CRYSTAL SILICON [J].

CROUCH, RK ;

ROBERTSO.JB ;

GILMER, TE .

PHYSICAL REVIEW B, 1972, 5 (08) :3111-&

[4] FLUORESCENT DECAY TIMES OF EXCITONS BOUND TO ISOELECTRONIC TRAPS IN GAP AND ZNTE [J].

CUTHBERT, JD ;

THOMAS, DG .

PHYSICAL REVIEW, 1967, 154 (03) :763-&

[5]

DEXTER DL, 1958, SOLID STATE PHYS, V6, P371

[6] BOUND EXCITON RECOMBINATION IN BERYLLIUM-DOPED SILICON [J].

HENRY, MO ;

LIGHTOWLERS, EC ;

KILLORAN, N ;

DUNSTAN, DJ ;

CAVENETT, BC .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (10) :L255-L261

[7]

HENRY MO, UNPUB J PHYS C

[8] CARBON-ACCEPTOR PAIR CENTERS (X-CENTERS) IN SILICON [J].

JONES, CE ;

SCHAFER, D ;

SCOTT, W ;

HAGER, RJ .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :5148-5158

[9]

KILLORAN N, UNPUB J PHYS C

[10] EXCITATION SPECTROSCOPY ON THE P, Q, R ISOELECTRONIC LINES IN INDIUM DOPED SILICON [J].

WAGNER, J ;

WEBER, J ;

SAUER, R .

SOLID STATE COMMUNICATIONS, 1981, 39 (12) :1273-1276

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