SCANNING TUNNELING MICROSCOPY OF CUBIC SILICON-CARBIDE SURFACES

被引：23

作者：

CHANG, CS ^{[1
]}

ZHENG, NJ ^{[1
]}

TSONG, IST ^{[1
]}

WANG, YC ^{[1
]}

DAVIS, RF ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1990年 / 73卷 / 11期

关键词：

defects; scanning tunneling microscopy; silicon; silicon carbide; surface;

D O I：

10.1111/j.1151-2916.1990.tb06448.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Scanning tunneling microscopy is used to study β‐SiC(001) surfaces. The β‐SiC(001) single crystals were epitaxially grown by a two‐steep chemical vapor deposition process on Si(001) wafer substrates. The overall surface topography of β‐SiC is generally much rougher than that of Si wafers. Atomically resolved images corresponding to 3 × 2 and c(2 × 2) geometries of the β‐SiC(001) surface are presented. Our results agree with models constructed from Si dimers for these structures. The larger‐scale images show that the surface is under compressive stress and exhibits high density of defects, e.g., antiphase boundaries (APB's), in some areas. Images with unusual superstructures are also shown. Copyright © 1990, Wiley Blackwell. All rights reserved

引用

页码：3264 / 3268

页数：5

共 21 条

[1] CHEMICALLY-FORMED BUFFER LAYERS FOR GROWTH OF CUBIC SILICON-CARBIDE ON SILICON SINGLE-CRYSTALS [J].

ADDAMIANO, A ;

KLEIN, PH .

JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :291-294

[2] BUFFER-LAYER TECHNIQUE FOR THE GROWTH OF SINGLE-CRYSTAL SIC ON SI [J].

ADDAMIANO, A ;

SPRAGUE, JA .

APPLIED PHYSICS LETTERS, 1984, 44 (05) :525-527

[3] STOICHIOMETRIC CHANGES IN THE SURFACE OF (100) CUBIC SIC CAUSED BY ION-BOMBARDMENT AND ANNEALING [J].

BELLINA, JJ ;

ZELLER, MV .

APPLIED SURFACE SCIENCE, 1986, 25 (04) :380-390

[4] SINGLE-TUBE 3-DIMENSIONAL SCANNER FOR SCANNING TUNNELING MICROSCOPY [J].

BINNIG, G ;

SMITH, DPE .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1986, 57 (08) :1688-1689

[5]

Carter C. H. Jr., 1986, Journal of Materials Research, V1, P811, DOI 10.1557/JMR.1986.0811

[6] THE BETA-SIC(100) SURFACE STUDIED BY LOW-ENERGY ELECTRON-DIFFRACTION, AUGER-ELECTRON SPECTROSCOPY, AND ELECTRON-ENERGY LOSS SPECTRA [J].

DAYAN, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (01) :38-45

[7]

DAYAN M, 1985, J VAC SCI TECHNOL A, V3, P361, DOI 10.1116/1.573221

[8] STEPS ON SI(001) [J].

GRIFFITH, JE ;

KOCHANSKI, GP ;

KUBBY, JA ;

WIERENGA, PE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03) :1914-1918

[9] STUDY OF HIGH-ORDER RECONSTRUCTIONS OF THE SI(100) SURFACE [J].

IHM, J ;

LEE, DH ;

JOANNOPOULOS, JD ;

BERKER, AN .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :705-708

[10] SURFACE STUDIES OF EPITAXIAL BETA-SIC ON SI(100) [J].

KAPLAN, R .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) :1636-1641

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