THE GROWTH OF DIFFUSION DOPED ZNSE-TE EPILAYERS BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

We have used atmospheric pressure metalorganic chemical vapour deposition to deposit tellurium (Te) doped ZnSe:Te epilayers on (100) GaAs substrates. A diffusion doping method was used to achieve controllable doping levels in the 10(18) to 10(19) cm-3 range to overcome the difficulties encountered when using conventional bubbler cell growth methods. The relative increase in Te related emission in the photoluminescence spectrum with increasing concentration was consistent with the opinion that only Te ion doublets or large Te ion clusters lead to exciton trapping in ZnSe. In addition, a band edge emission line (I(l)T) showing a peak shift to lower energies with increasing growth temperature was observed. This may be attributed to a complex involving Te ions and ZnSe I(l)D centres.