THE MOCVD GROWTH WITHOUT PREREACTION OF ZNSE AND ZNS LAYERS

被引：49

作者：

WRIGHT, PJ

PARBROOK, PJ

COCKAYNE, B

JONES, AC

ORRELL, ED

ODONNELL, KP

HENDERSON, B

机构：

[1] EPICHEM LTD,WIRRAL L62 3QF,MERSEYSIDE,ENGLAND

[2] UNIV STRATHCLYDE,DEPT PHYS & APPL PHYS,GLASGOW G4 ONG,SCOTLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 94卷 / 02期

关键词：

D O I：

10.1016/0022-0248(89)90019-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：441 / 447

页数：7

共 14 条

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APPLIED PHYSICS LETTERS, 1978, 33 (07) :656-658

[8] MOCVD LAYER GROWTH OF ZNSE USING A NEW ZINC SOURCE [J].

WRIGHT, PJ ;

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JONES, AC ;

ORRELL, ED .

JOURNAL OF CRYSTAL GROWTH, 1987, 84 (03) :552-554

[9] THE USE OF HETEROCYCLIC-COMPOUNDS IN THE ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION OF EPITAXIAL ZNS, ZNSE AND ZNO [J].

WRIGHT, PJ ;

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[10] THE ORGANO-METALLIC CHEMICAL VAPOR-DEPOSITION OF ZNS AND ZNSE AT ATMOSPHERIC-PRESSURE [J].

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JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :148-154

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