PRESSURE-INDUCED GAMMA-X CROSSOVER IN THE CONDUCTION-BAND OF ORDERED AND DISORDERED GAINP ALLOYS

被引：22

作者：

UCHIDA, K

YU, PY

NOTO, N

WEBER, ER

机构：

[1] UNIV CALIF BERKELEY,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720

[2] LAWRENCE BERKELEY LAB,DIV MAT SCI,BERKELEY,CA 94720

[3] LAWRENCE BERKELEY LAB,DEPT PHYS,BERKELEY,CA 94720

[4] SHIN ETSU HANDOUTAI CO,ISOBE SEMICOND LAB,ISOBE AN NAKA,GUNMA,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 21期

关键词：

D O I：

10.1063/1.111449

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pressure-dependent photoluminescence in both ordered and disordered Ga0.5In0.5P is reported. In ordered Ga0.5In0.5P, emissions are observed from both the direct band gap at the Brillouin zone center (GAMMA) and from the indirect band gap involving the conduction band at the X point of the Brillouin zone. The conduction-band minima at X and GAMMA in the ordered phase are found to be lowered in energy by the same amount with respect to those in the disordered phase. Our results support the existence of ordering along the [001] direction in GaInP as proposed recently by Kurtz.

引用

页码：2858 / 2860

页数：3

共 20 条

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KOBAYASHI T, 1993, IN PRESS P JOINT AIR

[12] INFLUENCE OF GROWTH TEMPERATURE ON CRYSTALLINE-STRUCTURE IN GA0.5IN0.5P GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].