PRECIPITATION IN FE-IMPLANTED OR NI-IMPLANTED AND ANNEALED GAAS

被引：23

作者：

CHANG, JCP ^{[1
]}

OTSUKA, N ^{[1
]}

HARMON, ES ^{[1
]}

MELLOCH, MR ^{[1
]}

WOODALL, JM ^{[1
]}

机构：

[1] PURDUE UNIV,SCH MAT ENGN,W LAFAYETTE,IN 47907

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 22期

关键词：

D O I：

10.1063/1.112570

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the formation of metal/semiconductor composites by ion implantation of Fe and Ni into GaAs and a subsequent anneal to nucleate clusters. Electron diffraction experiments and high resolution transmission electron microscopy images indicate that these precipitates are probably hexagonal and metallic Fe3GaAs or Ni3GaAs with orientation relationship to GaAs of (101̄0)pp∥(422̄)m, (0002)pp∥(111̄)m, and [12̄10] pp∥[011]m. Correlation of the electrical and structural properties of the samples annealed at different temperatures shows that the buried Schottky-barrier model has general applicability. © 1994 American Institute of Physics.

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页码：2801 / 2803

页数：3

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