PHOTOCURRENT ENHANCEMENT IN A GAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTOR DUE TO ULTRASMALL AU ISLANDS

被引：3

作者：

KOSCIELNIAK, WC ^{[1
]}

KOLBAS, RM ^{[1
]}

LITTLEJOHN, MA ^{[1
]}

LICZNERSKI, BW ^{[1
]}

机构：

[1] INST ELECTR TECHNOL,PL-50370 WROCLAW,POLAND

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 12期

关键词：

D O I：

10.1063/1.99250

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：987 / 989

页数：3

共 12 条

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[6] MICROCLEAVAGE TRANSMISSION ELECTRON-MICROSCOPY APPLIED TO THE INTERFACIAL STRUCTURE OF MULTILAYERS AND MICROSTRUCTURE OF SMALL PARTICLES ON A SUBSTRATE
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[J]. APPLIED PHYSICS LETTERS, 1987, 50 (21) : 1480 - 1481
[7] OPTICAL-PROPERTIES OF DISCONTINUOUS GOLD-FILMS
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[J]. PHYSICAL REVIEW B, 1978, 18 (02): : 674 - 695
[8] MONOLITHIC INTEGRATION OF A 3-GHZ DETECTOR PREAMPLIFIER USING A REFRACTORY-GATE, ION-IMPLANTED MESFET PROCESS
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[J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (11) : 600 - 602
[9] THE DSI DIODE - A FAST LARGE-AREA OPTOELECTRONIC DETECTOR
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (06) : 1034 - 1036
[10] METAL-SEMICONDUCTOR-METAL PHOTODETECTOR FOR HIGH-SPEED OPTOELECTRONIC CIRCUITS
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 459 - 464

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