SELECTION-RULES FOR BOUND EXCITON AUGER RECOMBINATION IN SEMICONDUCTORS

被引:1
作者
GAL, M
BELEZNAY, F
机构
关键词
D O I
10.1016/0038-1098(82)90445-8
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:263 / 265
页数:3
相关论文
共 7 条
[1]   CALCULATION OF AUGER SPECTRA IN J-J COUPLING [J].
ASAAD, WN .
NUCLEAR PHYSICS, 1963, 44 (03) :415-&
[2]  
DEAN PJ, 1979, TOPICS CURRENT PHYSI, V14, pCH3
[3]   OSCILLATOR-STRENGTHS FOR ELECTRON-HOLE COMPLEXES (AX0) [J].
MORGAN, TN .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (06) :L131-L134
[4]   AUGER TRANSITION RATES FOR EXCITONS BOUND TO ACCEPTORS IN SI AND GE [J].
OSBOURN, GC ;
SMITH, DL .
PHYSICAL REVIEW B, 1977, 16 (12) :5426-5435
[5]   AUGER LIFETIMES FOR EXCITONS BOUND TO NEUTRAL DONORS AND ACCEPTORS IN SI [J].
SCHMID, W .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1977, 84 (02) :529-540
[6]   ORIGIN OF BOUND EXCITON LINES IN INDIUM-PHOSPHIDE AND GALLIUM-ARSENIDE [J].
WHITE, AM ;
DEAN, PJ ;
DAY, B .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (07) :1400-1411
[7]   TRANSITION LINE STRENGTHS FOR EXCITONS BOUND TO NEUTRAL ACCEPTORS IN DIRECT-GAP SEMICONDUCTORS [J].
WHITE, AM .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (11) :1971-1974