MEASUREMENT OF ELASTIC RELAXATION IN CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY OF GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES

被引：9

作者：

DUAN, XF

机构：

[1] Beijing Laboratory of Electron Microscopy, Chinese Academy of Sciences, Beijing 100080

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 03期

关键词：

D O I：

10.1063/1.107925

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two types of relaxation occur in the cross-sectional transmission electron microscopy samples of the GexSi1-x/Si strained-layer superlattices (SLS) by large-angle convergent-beam electron diffraction (LACBED) and imaging technique which gives a good LACBED pattern superimposed on a high spatial resolution shadow image of the SLS. One type of relaxation occurs between the Si and the GeSi layers. It is negligible in the convergent-beam electron diffraction (CBED) case for the larger value of the ratio of the sample thickness to the SLS wavelength. Another type occurs between the superlattice as an average crystal and the Si substrate. The relaxation of the SLS can be measured by the shift of the Kikuchi line in the SLS from that in the Si substrate.

引用

页码：324 / 326

页数：3

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