共 18 条
[1]
GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD
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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,
1984, 23 (11)
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[5]
MOCVD GROWTH OF ZNSXSE1-X EPITAXIAL LAYERS LATTICE-MATCHED TO GAAS USING ALKYLS OF ZN, S AND SE
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1985, 24 (11)
:L864-L866
[6]
COHERENT GROWTH OF ZNSE ON GAAS BY MOCVD
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1985, 24 (08)
:L578-L580
[7]
LUMINESCENCE STUDIES OF INDIVIDUAL DISLOCATIONS IN II-VI (ZNSE) AND III-V (INP) SEMICONDUCTORS
[J].
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS,
1984, 17 (35)
:6477-6492
[8]
GROWTH OF SINGLE DOMAIN GAAS ON 2-INCH SI(100) SUBSTRATE BY MOLECULAR-BEAM EPITAXY
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,
1985, 24 (06)
:L391-L393
[9]
OKAJIMA M, 1986, 18TH C SOL STAT DEV, P647